Abstract
As the demand for small form-factor and more capable electronic devices continues to grow, there is a growing need for high-density interconnect technology to provide the necessary high-speed data transfer and low power consumption between chiplets or system-on-chip and memory. This paper presents, for the first time, electrical modeling and characterization results for 2-µm line and space (L/S) and 1.5-µm L/S signal wiring in high-density wiring layers in a panel-level organic interposer. The first part of this paper shows various high-density routing configurations ( 5 µm) formed in organic thin-films, explicitly focusing on the effect on RC delays, crosstalk, insertion loss, and the range of characteristic impedance that fine line structures can provide, which accounts for the impedance matching to mitigate reflections. To verify the high-density signaling models, the second part of the paper focuses on electromagnetic simulations and hardware measurements up to 20 GHz for 5.9-mm and 1.3-mm single-ended transmission lines. In addition to the agreement between measurement and simulations results for both 2-µm and 1.5-µm L/S configurations up to 20 GHz, this paper quantifies measured per-unit-length insertion loss of the high density wires at multiple frequencies to serve as a standard of comparison
